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參數(shù)資料
| 型號(hào)： | IRLU014N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | IRLU014N |
IRLR/U014N
HEXFET
Power MOSFET
S
D
G
Parameter
Typ.
–––
–––
–––
Max.
5.3
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°
C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.14
I
D
= 10A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
5/4/99
www.irf.com
1
D-Pak
TO-252AA
I-Pak
TO-251AA
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°
C
PD- 94350
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLR014N | HEXFET Power MOSFET |
| IRLZ10 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) | TO-220AB |
| IRLZ14A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
| IRLZ20 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-220AB |
| IRLZ24A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU014NHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 10A 3PIN IPAK - Bulk |
| IRLU014NPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU014PBF | 功能描述:MOSFET N-Chan 60V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU020 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-251 |
| IRLU024 | 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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