參數(shù)資料
型號(hào)： IRLR3915PBF
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/11頁
文件大小： 321K
代理商： IRLR3915PBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 25xjkl V
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
62
110
1.3
93
170
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
12
–––
14
1.0
–––
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
–––
9.0
–––
17
–––
7.4
–––
51
–––
83
–––
100
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
V
GS
= 5.0V, I
D
= 26A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 30A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 30A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 30A
R
G
= 8.5
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
14
17
3.0
–––
20
250
200
-200
92
14
25
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
–––
–––
nH
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1870 –––
390
74
2380 –––
290
540
–––
–––
pF
–––
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Source-Drain Ratings and Characteristics
61
240
m
相關(guān)PDF資料
PDF描述
IRLU3915PbF AUTOMOTIVE MOSFET
IRLR7807ZPBF HEXFET Power MOSFET
IRLU7807ZPbF HEXFET Power MOSFET
IRLR7811WCPBF SMPS MOSFET
IRLR7821PBF Replacement for Texas Instruments part number SN74LS161AN. Buy from authorized manufacturer Rochester Electronics.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR3915TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 61A 3PIN DPAK - Tape and Reel
IRLR3915TRLHR 制造商:International Rectifier 功能描述:MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, D-PAK - Tape and Reel
IRLR3915TRPBF 功能描述:MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR3915TRPBF-EL 制造商:International Rectifier 功能描述:
IRLR3915TRRHR 制造商:International Rectifier 功能描述:MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, D-PAK - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*