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參數(shù)資料
| 型號： | IRLR3915 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 581K |
| 代理商： | IRLR3915 |
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
61
43
30
240
120
0.77
± 16
200
600
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
°C
IRLR3915
IRLU3915
HEXFET
Power MOSFET
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
110
Max.
1.3
50
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient–––
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 14m
I
D
= 30A
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94543
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
D-Pak
IRLR3915
I-Pak
IRLU3915
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLR3915HR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 61A 3PIN DPAK - Bulk |
| IRLR3915PBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3915TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 61A 3PIN DPAK - Tape and Reel |
| IRLR3915TRLHR | 制造商:International Rectifier 功能描述:MOSFET, 55V, 61A, 14 MOHM, 61 NC QG, LOGIC LEVEL, D-PAK - Tape and Reel |
| IRLR3915TRPBF | 功能描述:MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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