參數(shù)資料
型號(hào)： IRLR210
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： ADVANCED POWER MOSFET
中文描述： 2.7 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 234K
代理商： IRLR210
IRLR/U210A
200
--
1.0
--
--
--
--
--
0.19
--
--
--
--
--
35
14
9
9
20
6
6.1
1.4
2.8
--
--
2.0
100
-100
10
100
1.5
--
240
45
20
30
30
50
20
9
--
--
1.9
185
--
--
--
123
0.38
2.7
9
1.5
--
--
Notes;
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=5mH, I
AS
=2.7A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
I
≤
3.3A, di/dt
≤
140A/
μ
s, V
DD
≤
BV
, Starting T
J
=25
°
C
Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
Essentially Independent of Operating Temperature
2
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=20V
V
GS
=-20V
V
DS
=200V
V
DS
=160V,T
C
=125
°
C
V
GS
=5V,I
D
=1.35A
(4)
V
DS
=40V,I
D
=1.35A
(4)
V
DD
=100V,I
D
=3.3A,
R
G
=22
See Fig 13
(4) (5)
V
DS
=160V,V
GS
=5V,
I
D
=3.3A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=2.7A,V
GS
=0V
T
J
=25
°
C,I
F
=3.3A
di
F
/dt=100A/
μ
s
(4)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLR210A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLR210ATF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR210ATM 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLR211 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-252
IRLR220 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | TO-252
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