參數(shù)資料
型號: IRLMS1902
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 187K
代理商: IRLMS1902
IRLMS1902
HEXFET
Power MOSFET
V
DSS
= 20V
R
DS(on)
= 0.10
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6
package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
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Top View
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLMS1902PBF 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6
IRLMS1902TR 功能描述:MOSFET N-CH 20V 3.2A 6-TSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLMS1902TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 3.2A 6-Pin Micro T/R
IRLMS1902TRPBF 功能描述:MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLMS2002 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6