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參數(shù)資料
| 型號(hào)： | IRLL014 |
| 英文描述： | HEXFET Power MOSFET(158.50 k) |
| 中文描述： | HEXFET功率MOSFET（158.50十一） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | IRLL014 |
IRLL014N
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.14
I
D
= 2.0A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
1/25/99
Description
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Parameter
Typ.
90
50
Max.
120
60
Units
R
θ
JA
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Thermal Resistance
°C/W
Parameter
Max.
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Absolute Maximum Ratings
A
PD- 91499B
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLL024NQ | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.1A I(D) | SOT-223 |
| IRLL014N | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRLL1905 | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 1.6A I(D) | TO-220AB |
| IRLM014A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) | SOT-223 |
| IRLP2505 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLL014_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRLL014N | 制造商:International Rectifier 功能描述:MOSFET N LOGIC SOT-223 |
| IRLL014NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 2.8A 4PIN SOT-223 - Rail/Tube |
| IRLL014NPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLL014NTR | 功能描述:MOSFET N-CH 55V 2A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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