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參數(shù)資料
| 型號(hào)： | IRLC1304 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET Die in Wafer Form(晶圓形式的HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET芯片晶圓形式（晶圓形式的馬鞍山的HEXFET功率場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 31K |
| 代理商： | IRLC1304 |
Parameter
V
(BR)DSS
R
DS(on)
Description
Guaranteed (Min/Max)
40V Min.
0.020
Max.
0.030
Max.
1.0V Min., 3.0V Max.
25μA Max.
± 15μA Max.
175°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±16V
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.181" x 0.303" ( 4.6mm x 7.7 mm)
150mm, with std. < 100 > flat
.014" + / -.003"
01-5298
0.1 mm
0.13mm Diameter Minimum, 0.51mm Max.
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
40 V
Size 4.6
Rds(on)=0.020
6" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRLBL1304
Electrical Characteristics ( Wafer Form )
IRLC1304
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
PD- 91871
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLD014PBF | HEXFET Power MOSFET |
| IRLD024PBF | HEXFET㈢ Power MOSFET |
| IRLD110PBF | HEXFET Power MOSFET |
| IRLD120PBF | HEXFET Power MOSFET |
| IRLD120 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLC140B | 制造商:Vishay Semiconductors 功能描述:LOGIC MOSFET N-CHANNEL 100V - Bulk |
| IRLD014 | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLD014PBF | 功能描述:MOSFET N-Chan 60V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLD024 | 功能描述:MOSFET N-Chan 60V 2.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLD024_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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