參數(shù)資料
型號: IRL3705ZS
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車MOSFET的
文件頁數(shù): 1/12頁
文件大小: 296K
代理商: IRL3705ZS
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95854
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 8.0m
I
D
= 75A
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRL3705Z
IRL3705ZS
IRL3705ZL
D
2
Pak
IRL3705ZS
TO-220AB
IRL3705Z
TO-262
IRL3705ZL
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.14
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
130
0.88
± 16
120
Max.
86
61
75
340
180
See Fig.12a, 12b, 15, 16
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