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參數(shù)資料
| 型號(hào)： | IRKV105/8A |
| 元件分類： | 晶閘管 |
| 英文描述： | 165 A, 800 V, SCR, TO-240AA |
| 封裝： | ADD-A-PAK-7 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 193K |
| 代理商： | IRKV105/8A |
IRKU/V105 Series
3
Bulletin I27136 rev. D 02/02
www.irf.com
T
J
Junction operating temperature
range
Tstg
Storage temperature range
- 40 to 125
R
thJC
Max. internal thermal resistance,
0.135
Per module, DC operation
junction to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
5
busbar
3
wt
Approximate weight
110 (4)
g (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRKU/V105
Units
Conditions
- 40 to 130
0.1
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKU105/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
20
mA
T
J = 130
o
C, gate open circuit
at VRRM, VDRM
V
INS
RMS isolation voltage
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J = 130
o
C, linear to 0.67 V
DRM,
of off-state voltage (5)
gate open circuit
Triggering
P
GM
Max. peak gate power
12
P
G(AV) Max. average gate power
3
I
GM
Max. peak gate current
3
A
-V
GM
Max. peak negative gate voltage
10
V
GT
Max. gate voltage
4.0
V
TJ = - 40°C
required to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
I
GT
Max. gate current
270
TJ = - 40°C
required to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
T
J = 125
o
C,
rated V
DRM applied
T
J = 125
o
C,
rated V
DRM applied
Parameters
IRK.U/V105
Units
Conditions
Parameters
IRKU/V105
Units
Conditions
Blocking
V
500
V/
s
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRKU/V105
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRKV106/8AS90 | 165 A, 800 V, SCR, TO-240AA |
| IRKV106/8A | 165 A, 800 V, SCR, TO-240AA |
| IRKV105/04S90PBF | 165 A, 400 V, SCR, TO-240AA |
| IRKV105/08S90PBF | 165 A, 800 V, SCR, TO-240AA |
| IRKV105/12S90PBF | 165 A, 1200 V, SCR, TO-240AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKV132-04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|130A I(T) |
| IRKV132-06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|130A I(T) |
| IRKV132-08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|130A I(T) |
| IRKV132-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1KV V(RRM)|130A I(T) |
| IRKV132-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|130A I(T) |
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