IRKU/V71, 91 Series
2
Bulletin I27135 rev. F 10/02
www.irf.com
V
RRM
, maximum
repetitive
peak reverse voltage
V
V
RSM
, maximum
peak reverse voltage
V
V
, max. repetitive
peak off-state voltage,
gate open circuit
V
I
RRM
I
DRM
125°C
mA
Voltage
Code
-
04
400
500
400
IRKU/V71, 91
08
800
900
800
15
12
1200
1300
1200
16
1600
1700
1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
I
T(AV)
Max. average on-state
current
75
95
180
o
conduction, half sine wave,
T
C
= 85
o
C
DC
I
T(RMS
)
Max. RMS on-state
current
115
150
@T
C
80
75
°C
I
TSM
Max. peak, one cycle
non-repetitive on-state
current
1665
1740
1400
1470
1850
1785
1870
1500
1570
2000
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms reapplied
t=10ms
No voltage
100% V
RRM
T
J
= 25
o
C,
1940
13.86
12.56
9.80
8.96
17.11
15.60
138.6
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
t=8.3ms no voltage reapplied
t=10ms
No voltage
t=8.3ms reapplied
t=10ms
100% V
RRM
t=8.3ms reapplied
t=10ms
T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
I
2
t
Max. I
2
t for fusing
I
2
√
t
Max. I
2
√
t for fusing (1)
KA
2
√
s
V
T(TO)
Max. value of threshold
voltage (2)
r
t
slope resistance (2)
V
TM
voltage
0.82
0.85
3.00
2.90
0.80
0.85
2.40
2.25
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
,
I
g
= 500mA,
t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
Max. value of on-state
Max. peak on-state
di/dt
Max. non-repetitive rate
of rise of turned on
current
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
(1) I
2
t for time t
x
= I
2
√
t
x
√
t
x
.
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x
I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
I
H
Max. holding current
200
Initial T
J
= T
J
max.
150
A/μs
KA
2
s
V
m
mA
Sinusoidal
half wave,
Initial T
J
= T
J
max.
Parameters
IRKU/V71
IRKU/V91
Units
Conditions
On-state Conduction
A
A
1.59
1.58
V
T
J
= 25°C