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參數(shù)資料
| 型號： | IRKU56-08S90PBF |
| 元件分類： | 晶閘管 |
| 英文描述： | 86.35 A, 800 V, SCR, TO-240AA |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 128K |
| 代理商： | IRKU56-08S90PBF |
IRKU/V41, 56 Series
9
Bulletin I27134 rev. B 09/97
www.irf.com
Fig. 20 - Recovery Current Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 21 - Thermal Impedance Z
thJC
Characteristics
Fig. 22 - Gate Characteristics
30
40
50
60
70
80
90
100
110
10
20
30
40
50
60
70
80
90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t
-I
rr
(
A
)
Rate Of Fall Of Forward Current - di/dt (A/s)
100 A
50 A
I
= 200 A
TM
20 A
10 A
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
100
150
200
250
300
350
400
450
500
10
20
30
40
50
60
70
80
90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/s)
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rge
-
Q
rr
(
C
)
I
= 200 A
TM
20 A
10 A
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
n
t
Th
e
rm
a
lI
m
p
e
d
a
n
c
e
Z
(
K
/W
)
Per Junction
Steady State Value:
R
= 0.46 K/W
R
= 0.40 K/W
(DC Operation)
IRK.41.. Series
IRK.56.. Series
thJC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b)
(a)
Rectangular gate pulse
(4) (3)
(2) (1)
(1) PGM = 100 W, tp = 500 s
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
In
st
ant
a
n
e
o
u
s
G
a
te
V
o
lt
ag
e
(
V
)
TJ
=
-4
0
°C
TJ
=
25
°
C
TJ
=
12
5
°C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 s, t p >= 6 s
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 s, tp >= 6 s
IRK.41../.56.. Series
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