參數(shù)資料
型號: IRKU105/04AS90PBF
元件分類: 晶閘管
英文描述: 165 A, 400 V, SCR, TO-240AA
封裝: ADD-A-PAK-7
文件頁數(shù): 2/8頁
文件大?。?/td> 117K
代理商: IRKU105/04AS90PBF
IRKU/V105 Series
2
Bulletin I27136 rev. E 10/02
www.irf.com
V
RRM
, maximum
repetitive
peak reverse voltage
V
V
, maximum
non-repetitive
peak reverse voltage
V
V
, max. repetitive
peak off-state voltage,
gate open circuit
V
I
RRM
I
DRM
130°C
mA
Voltage
Code
-
04
400
500
400
IRKU/V105
08
800
900
800
20
12
1200
1300
1200
16
1600
1700
1600
I
T(AV)
Max. average on-state
current
180
o
conduction, half sine wave,
T
C
= 85
o
C
DC
I
T(RMS
)
Max. RMS on-state
current.
@ T
C
77
°C
I
TSM
Max. peak, one cycle
non-repetitive on-state
current
1785
1870
1500
1570
2000
2100
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
I
2
t
Max. I
2
t for fusing
15.91
14.52
11.25
10.27
20.00
18.30
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
I
2
t
Max. I
2
t for fusing (1)
159.1
K A
2
s
t= 0.1 to 10ms, no voltage reappl., T
J
=T
J
max.
Low level (3)
High level (4)
V
T(TO)
Max. value of threshold
voltage (2)
0.80
0.85
r
t
Max. value of on-state
slope resistance (2)
Max. peak on-state
2.37
2.25
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
,
I
g
= 500mA,
t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
V
TM
voltage
di/dt
Max. non-repetitive rate
of rise of turned on
150
A/μs
current
Max. holding current
I
H
200
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V,resistive load
Initial T
J
= T
J
max.
V
m
1.64
V
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial T
J
= T
J
max.
105
Parameters
IRKU/V105
Units
Conditions
On-state Conduction
A
A
165
mA
KA
2
s
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
(1) I
2
t for time t
x
= I
2
t
x
t
x
.
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x
I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
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