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參數(shù)資料
| 型號： | IRKTF72-12HK |
| 廠商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| 中文描述： | 快速晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 193K |
| 代理商： | IRKTF72-12HK |
IRK.F72.. Series
2
Bulletin I27104 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
800
V
RSM
, maximum non-
repetitive peak rev. voltage
V
800
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
Type number
08
12
1200
1200
I
T(AV)
Maximum average on-state current
71
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS)
I
TSM
Maximum RMS current
158
A
T
C
= 90°C, as AC switch
t = 10ms
No voltage
Maximum peak, one-cycle,
2100
A
non-repetitive surge current
2200
t = 8.3ms
reapplied
1750
t = 10ms
100% V
RRM
reapplied
1830
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
21.6
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125°C
19.8
t = 8.3ms
reapplied
15.3
t = 10ms
100% V
RRM
reapplied
14.0
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
216
KA
2
√
s t = 0 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
1.28
V
1.32
r
t1
Low level value of on-state slope resistance
3.20
mW
r
t2
High level value of on-state slope resistance
3.00
V
TM
Maximum on-state voltage drop
2.40
V
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6
, Ig
= 1A
I
L
Typical latching current
1000
mA
Parameter
IRK.F72..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
140
230
220
345
1860
2590
A
400Hz
170
280
250
406
900
1290
A
2500Hz
135
210
210
330
320
470
A
5000Hz
10000Hz
115
85
180
140
205
165
310
235
205
-
310
-
A
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/μs
Case temperature
90
60
90
22
/ 0.15 μF
60
90
22
/ 0.15 μF
60
°C
Equivalent values for RC circuit
22
/ 0.15 μF
I
TM
I
TM
180
o
el
100μs
I
TM
180
o
el
Current Carrying Capacity
IRK.F72..
30
相關PDF資料 |
PDF描述 |
|---|---|
| IRKTF72 | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKTF71-12HJN | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKTF71-12HK | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKTF72-12HJN | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKTF71-12HKN | FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
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