參數(shù)資料
型號(hào)： IRKLF112-04HL
廠商： International Rectifier
英文描述： INT-A-pak Power Modules(4V,112A,可控硅/可控硅L結(jié)構(gòu)INT-A-pak 功率模塊)
中文描述： 相依甲柏功率模塊（4V電壓，112A章，可控硅/可控硅蜇結(jié)構(gòu)相依甲柏功率模塊）
文件頁數(shù)： 2/8頁
文件大?。?/td> 141K
代理商： IRKLF112-04HL
IRK.F112.. Series
2
Bulletin I27091 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
400
V
RSM
, maximum non-
repetitive peak rev. voltage
V
400
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
Type number
04
08
800
800
I
T(AV)
Maximum average on-state current
112
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS)
I
TSM
Maximum RMS current
250
A
T
C
= 90°C, as AC switch
t = 10ms
No voltage
Maximum peak, one-cycle,
3090
A
non-repetitive surge current
3237
t = 8.3ms
reapplied
2600
t = 10ms
100% V
RRM
reapplied
2720
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
47.8
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125°C
43.6
t = 8.3ms
reapplied
33.8
t = 10ms
100% V
RRM
reapplied
30.8
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
478
KA
2
√
s
t = 0 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
1.19
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
1.43
r
t1
Low level value of on-state slope resistance
1.67
mW
r
t2
High level value of on-state slope resistance
1.12
V
TM
Maximum on-state voltage drop
1.77
V
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6
, Ig
= 1A
I
L
Typical latching current
1000
mA
Parameter
IRK.F112..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
220
220
350
550
2060
2900
A
400Hz
285
285
425
695
1230
1785
A
2500Hz
205
205
350
550
460
552
A
5000Hz
10000Hz
175
125
170
120
295
230
448
337
295
-
448
-
A
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/μs
Case temperature
90
60
90
47
/ 0.22 μF
60
90
47
/ 0.22 μF
60
°C
Equivalent values for RC circuit
47
/ 0.22 μF
I
TM
I
TM
180
o
el
100μs
I
TM
180
o
el
Current Carrying Capacity
IRK.F112.. Series
30
相關(guān)PDF資料
PDF描述
IRKLF112-04HN INT-A-pak Power Modules(4V,112A,可控硅/可控硅L結(jié)構(gòu)INT-A-pak 功率模塊)
IRKTF111-04HN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF111-08HL Receptacle AA series 3 pin female PCB Vertical - no grd or latch
IRKTF111-08HN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112 FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRKLF112-04HLN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|112A I(T)
IRKLF112-04HM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|112A I(T)
IRKLF112-04HN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|112A I(T)
IRKLF112-04HNN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|112A I(T)
IRKLF112-04HP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|112A I(T)
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