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參數(shù)資料
| 型號： | IRKL430-16 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(額定電壓16V,快速L結(jié)構(gòu)絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（額定電壓16V的快速蜇結(jié)構(gòu)絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | IRKL430-16 |
IRK.430.. Series
2
Bulletin I27400 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
RSM
, maximum non-
repetitive peak rev. voltage
I
RRM
/I
DRM
max.
@ T
J
= T
J
max.
mA
Type number
Code
V
V
16
1600
1700
IRK.430..
18
1800
1900
100
20
2000
2100
I
T(AV)
I
F(AV)
I
T(RMS)
Maximum average on-state current
@ Case temperature
430
82
A
°C
180° conduction, half sine wave
Maximum RMS on-state current
675
A
180° conduction, half sine wave @ T
C
= 82°C
I
TSM
I
FSM
Maximum peak, one-cycle,
15.7
KA
t = 10ms
No voltage
non-repetitive surge current
16.4
t = 8.3ms
reapplied
13.2
t = 10ms
100% V
RRM
reapplied
13.8
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
1232
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
t = 8.3ms
reapplied
871
t = 10ms
100% V
RRM
reapplied
795
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
12320
KA
2
√
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
0.96
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
pk
= 1500A, T
J
= 25°C, t
p
= 10ms sine pulse
V
T(TO)2
High level value of threshold voltage
r
t1
Low level value of on-state slope resistance
1.06
0.51
m
r
t2
V
TM
V
FM
High level value of on-state slope resistance
0.45
Maximum on-state or forward
voltage drop
1.65
V
I
H
I
L
Maximum holding current
500
mA
T
J
= 25°C, anode supply 12V resistive load
Typical latching current
1000
Parameter
IRK.430..
Units Conditions
On-state Conduction
di/dt
Maximum rate of rise of turned-on
1000
A/μs
T
J
= T
J
max., I
TM
= 400A, V
DRM
applied
current
t
d
Typical delay time
2.0
μs
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 750A, T
J
= T
J
max, di/dt = -60A/μs,
V
R
= 50V, dv/dt = 20V/μs, Gate 0 V 100
t
q
Typical turn-off time
200
μs
Parameter
IRK.430..
Units Conditions
Switching
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參數(shù)描述 |
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| IRKL430-18 | 功能描述:SCR模塊 1800 Volt 430 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKL430-20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak-TM Power Modules |
| IRKL500-08 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SUPER MAGN-A-pak Power Modules |
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