- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358006 > IRKL250-14 1400V 250A Doubler Circuit Positive Phase Control Thyristor/Diode in a MAGN-A-Pak package PDF資料下載
參數(shù)資料
| 型號(hào)： | IRKL250-14 |
| 英文描述： | 1400V 250A Doubler Circuit Positive Phase Control Thyristor/Diode in a MAGN-A-Pak package |
| 中文描述： | 1400V 250A章倍增電路積極相位控制晶閘管/二極管的磁共振- à - Pak封裝 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | IRKL250-14 |
IRK.170, .230, .250 Series
3
Bulletin I27102 rev. C 05/02
www.irf.com
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
V
INS
RMS isolation voltage
dv/
dt
Critical rate of rise of off-state voltage
50
mA
T
J
=T
J
max.
3000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
V/
μ
s T
J
= T
J
max, exponential to 67% rated V
DRM
1000
T
J
T
stg
R
thJC
Maximum thermal resistance
junction to case
Junction operating temperature
Storage temperature range
-40 to 130
-40 to 150
o
C
o
C
Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
tourque should be rechecked after a period of
about 3 hours to allow for the spread of the
compound
T
Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
4 to 6
4 to 6
Nm
Nm
wt
Approximate weight
500
17.8
g
oz
Case style
MAGN-A-pak
I
P
GM
Maximum peak gate power
10.0
W
tp
≤
5ms,
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
2.0
W
f = 50Hz,
T
J
= T
J
max.
+I
GM
Maximum peak gate current
3.0
A
tp
≤
5ms,
T
J
= T
J
max.
-V
GT
Max. peak negative gate voltage
5.0
V
tp
≤
5ms,
T
J
= T
J
max.
V
GT
Maximum required DC gate
4.0
V
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
Anode supply = 12V, resistive
load ; Ra = 1
voltage to trigger
3.0
V
2.0
V
I
GT
Maximum required DC gate
350
mA
Anode supply = 12V, resistive
load ; Ra = 1
current to trigger
200
mA
100
mA
V
GD
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
I
GD
di/
dt
Blocking
Triggering
Thermal and Mechanical Specifications
0.25
V
@ T
J
= T
J
max., rated V
DRM
applied
10.0
mA @ T
J
= T
J
max., rated V
DRM
applied
500
A/
μ
s @ T
J
= T
J
max., I
TM
= 400 A rated V
DRM
applied
0.17
0.125
0.125
K/W Per junction, DC operation
R
thC-S
Thermal resistance, case to heatsink
0.02
0.02
0.02
K/W
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRKT132-04 | THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|130A I(T) |
| IRKT170-04 | 400V 170A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a MAGN-A-Pak package |
| IRKT180-04 | THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|180A I(T) |
| IRKT180-06 | THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|180A I(T) |
| IRKT180-08 | THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|180A I(T) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKL250-14D20 | 功能描述:SCR模塊 1200 Volt 230 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKL250-14D20N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|250A I(T) |
| IRKL250-14N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|250A I(T) |
| IRKL250-16 | 功能描述:SCR模塊 1200 Volt 230 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| IRKL250-16D20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|250A I(T) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。