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參數(shù)資料
| 型號： | IRKHF112-08HL |
| 廠商： | International Rectifier |
| 英文描述： | INT-A-pak Power Modules(8V,112A,可控硅/二極管H結構INT-A-pak 功率模塊) |
| 中文描述： | 相依甲柏功率模塊（8V的，112A章，可控硅/二極管?結構相依甲柏功率模塊） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 141K |
| 代理商： | IRKHF112-08HL |
IRK.F112.. Series
3
Bulletin I27091 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
°C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.17
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/μs
T
J
= 125°C., exponential to 67% V
DRM
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
Maximum peak reverse and off-state
leakage current
30
mA
Parameter
IRK.F112..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/μs
Gate drive 20V, 20
, tr
≤
1ms, V
D
= 80% V
DRM
T
J
= 125°C
I
TM
= 350A, di/dt = -25A/μs, V
R
= 50V, T
J
= 25°C
I
TM
= 350A, T
J
= 125°C, di/dt = -25A/μs,
V
R
= 50V, dv/dt = 400V/μs linear to 80% V
DRM
t
rr
t
q
Maximum recovery time
2
μs
Maximum turn-off time
N
L
10
15
μs
Parameter
IRK.F112..
Units Conditions
Switching
Parameter
IRK.F112..
Units Conditions
Triggering
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
Maximum peak average gate power
10
W
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Maximum peak positive gate current
10
A
Maximum peak negative gate voltage
5
V
Max. DC gate current required to trigger
200
mA
T
J
= 25°C, V
ak
12V, Ra = 6
DC gate voltage required to trigger
3
V
DC gate current not to trigger
20
mA
T
J
= 125°C, rated V
DRM
applied
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F112..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
相關PDF資料 |
PDF描述 |
|---|---|
| IRKLF112-08HL | INT-A-pak Power Modules(8V,112A,可控硅/可控硅L結構INT-A-pak 功率模塊) |
| IRKLF112-08HN | INT-A-pak Power Modules(8V,112A,可控硅/可控硅L結構INT-A-pak 功率模塊) |
| IRKTF112-04HLN | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKTF111-04HNN | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKTF112-04HNN | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRKHF112-08HLN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|112A I(T) |
| IRKHF112-08HM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|112A I(T) |
| IRKHF112-08HNN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|112A I(T) |
| IRKHF112-08HP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|112A I(T) |
| IRKHF131-02CL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|130A I(T) |
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