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參數(shù)資料
| 型號(hào)： | IRIS-G6651 |
| 廠商： | International Rectifier |
| 英文描述： | IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC |
| 中文描述： | 虹膜G6651是一種混合集成電路組成的功率MOSFET和控制器IC |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 272K |
| 代理商： | IRIS-G6651 |
www.irf.com
IRIS-G6651
Features
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (100uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Built-in soft drive circuit
Built-in low frequency PRC mode (
≒
20kHz)
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
TO-220 Fullpack (5 Lead)
Descriptions
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing
external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
230
±
15%
66
85 to 264
30
IRIS-G6651
650
3.9
Ω
Key Specifications
Data Sheet No. PD 96949A
Vin
IRIS-G6600
D
S
GND
OCP/FB
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately 120 to
140% of the above listed. When the output voltage is low and ON-duty is
narrow, the Pout (W) shall become lower than that of above.
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