參數(shù)資料
型號(hào): IRHY58130CM
廠商: International Rectifier
英文描述: 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
中文描述: 100V的N通道通孔抗輻射功率MOSFET(100V的,通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管)
文件頁數(shù): 4/8頁
文件大小: 118K
代理商: IRHY58130CM
IRHY57130CM
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
15V
10V
8.0V
V , Drain-to-Source Voltage (V)
I
D
5.0V
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
10V
8.0V
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
5.0
6.0
7.0
8.0
9.0
10.0
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 150 C
T = 25 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
12V
16A
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