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參數(shù)資料
| 型號(hào)： | IRHY57Z30CM |
| 廠商： | International Rectifier |
| 英文描述： | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| 中文描述： | 30V的N通道通孔抗輻射功率MOSFET（30V的，通孔安裝抗輻射功率?溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | IRHY57Z30CM |
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
=24V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.024 — 0.03
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.02 — 0.025
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.2 — 1.2
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHY57Z30CM, IRHY53Z30CM and IRHY54Z30CM
2. Part number IRHY58Z30CM
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 16A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
www.irf.com
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
V
Br
I
AU
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
37.9
255 33.5 30 30 30 25 20
I
59.4
290 28.5 25 25 20 15 10
Au
80.3
313 26.4 22.5 22.5 15
LET
Energy Range
V
DS
(V)
10 —
IRHY57Z30CM
3
nA
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHY58Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHY54Z30CM | 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRIS-A6351 | INTEGRATED SWITCHER |
| IRIS4009K | 30W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package |
| IRIS4009 | INTEGRATED SWITCHER |
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| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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