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參數(shù)資料
| 型號(hào)： | IRHY57130CM |
| 廠商： | International Rectifier |
| 英文描述： | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 100V的N通道通孔抗輻射功率MOSFET（100V的，通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 118K |
| 代理商： | IRHY57130CM |
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.064 — 0.08
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.06 — 0.075
V
GS
= 12V, I
D
=15A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.2 — 1.2
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
GS
= 12V, I
D
=15A
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHY57130CM, IRHY53130CM and IRHY54130CM
2. Part number IRHY58130CM
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 16A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
0
20
40
60
80
100
120
0
-5
-8
-10
-15
-20
VGS
V
Br
I
Au
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 100 100 100 100 100
I
59.4
341 32.5 100 100 100 35 25
Au
82.3
350 28.4 100 100 100
LET
Energy Range
V
DS
(V)
80 25
www.irf.com
3
IRHY57130CM
nA
V
相關(guān)PDF資料 |
PDF描述 |
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| IRHY58130CM | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHY54130CM | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHY53230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
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| IRHY58230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY57133CMSE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 130V 18A 3PIN TO-257 - Rail/Tube |
| IRHY57230CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| IRHY57230CMSE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHY57234CMSE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHY57Z30CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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