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參數(shù)資料
| 型號： | IRHY53034CM |
| 廠商： | International Rectifier |
| 英文描述： | 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| 中文描述： | 60V的N通道通孔抗輻射功率MOSFET（60V的通孔安裝抗輻射功率?溝道馬鞍山場效應管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHY53034CM |
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.034 — 0.043
V
GS
= 12V, I
D
= 16A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.03 — 0.038
V
GS
= 12V, I
D
= 16A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHY57034CM, IRHY53034CM and IRHY54034CM
2. Part number IRHY58034CM
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 16A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Kr
39.2
300 37.4 60 60 60 52 34
Xe
63.3
300 29.2 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20 14
Table 2. Single Event Effect Safe Operating Area
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
Kr
Xe
Au
www.irf.com
3
IRHY57034CM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHY54034CM | 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHY57034CM | 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHY58034CM | 60V, N-Channel Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHY53130CM | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場效應管) |
| IRHY57130CM | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場效應管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY53130CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY53130CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY53133CMSE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHY53230CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY53230CMSE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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