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參數(shù)資料
| 型號(hào)： | IRHSNA58064 |
| 廠商： | International Rectifier |
| 英文描述： | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| 中文描述： | 抗輻射同步整流表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 114K |
| 代理商： | IRHSNA58064 |
07/30/02
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57064
60V, N-CHANNEL
www.irf.com
1
Features:
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57064 for Lower Inductance
For footnotes refer to the last page
* Current is limited by package
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Product Summary
Part Number Radiation Level R
DS(on)
IRHSNA57064 100K Rads (Si) 5.6m
160nC
IRHSNA53064 300K Rads (Si) 5.6m
160nC
IRHSNA54064 600K Rads (Si) 5.6m
160nC
IRHSNA58064 1000K Rads (Si) 6.5m
160nC
Q
G
Absolute Maximum Ratings
Parameter
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
75*
Schottky and Body Diode Avg. Forward Current
75*
Opeating and Storage Temperature Range -55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
250
2.0
±20
370
75
25
W
W/°C
V
mJ
A
mJ
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
A
A
°C
PD-94323C
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