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參數(shù)資料
| 型號： | IRHQ9110 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表貼型抗輻射功率四P溝道MOS場效應(yīng)管) |
| 中文描述： | 100V的，4個P -通道表面安裝抗輻射功率MOSFET（100V的，表貼型抗輻射功率四馬鞍山P溝道場效應(yīng)管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 117K |
| 代理商： | IRHQ9110 |
www.irf.com
5
Pre-Irradiation
IRHQ9110
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
100
200
300
400
500
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-2.3A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
0.5
1.0
-V ,Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
-
S
V = 0 V
T = 25 C
T = 150 C
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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