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參數(shù)資料
| 型號： | IRHQ8214 |
| 英文描述： | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| 中文描述： | 250V 1000kRad高可靠性四N通道工貿(mào)署在28硬化MOSFET的引腳LCC封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | IRHQ8214 |
www.irf.com
5
Pre-Irradiation
IRHQ7214
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
0
4
Q , Total Gate Charge (nC)
8
12
16
20
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
相關PDF資料 |
PDF描述 |
|---|---|
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ4214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ9110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHQ93110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHSLNA53064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHQ9110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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| IRHQ9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ93110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSLNA53064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
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