參數(shù)資料
型號(hào): IRHNJ7430SE
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | SMT
中文描述: 晶體管| MOSFET的| N溝道| 500V五(巴西)直| 4.5AI(四)|貼片
文件頁數(shù): 7/8頁
文件大小: 120K
代理商: IRHNJ7430SE
www.irf.com
7
IRHNJ7230
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
.
Pre-Irradiation
25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature( C)
E
ID
4.2A
5.9A
9.4A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
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IRHNJ7230 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應(yīng)管)
IRHNJ8230 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應(yīng)管)
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