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參數(shù)資料
| 型號： | IRHNJ7230 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應(yīng)管) |
| 中文描述： | 為200V，N溝道表面安裝抗輻射功率MOSFET（200V的電壓，表貼型抗輻射功率?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHNJ7230 |
IRHNJ7230
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 3.4mH,
Peak IL = 9.4A, VGS = 12V
ISD
≤
9.4A, di/dt
≤
660A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions
—
SMD-0.5
PAD ASSIGNMENTS
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Data and specifications subject to change without notice. 7/00
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