參數(shù)資料
型號: IRHNJ598230
英文描述: -200V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
中文描述: - 200伏1000kRad高可靠性單P溝道工貿(mào)硬化的貼片MOSFET的- 0.5軟件包
文件頁數(shù): 7/8頁
文件大小: 120K
代理商: IRHNJ598230
www.irf.com
7
IRHNJ7230
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
.
Pre-Irradiation
25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature( C)
E
ID
4.2A
5.9A
9.4A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRHNJ7230 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT
IRHNJ7330SE 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
IRHNJ7430SE TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | SMT
IRHNJ8230 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT
IRHNJ3230 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應(yīng)管)
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