參數(shù)資料
型號(hào): IRHNJ58Z30
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 0.5)
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 123K
代理商: IRHNJ58Z30
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57Z30
30V, N-CHANNEL
TECHNOLOGY
07/30/02
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57Z30 100K Rads (Si) 0.020
IRHNJ53Z30 300K Rads (Si) 0.020
IRHNJ54Z30 600K Rads (Si) 0.020
IRHNJ58Z30 1000K Rads (Si) 0.025
I
D
22A*
22A*
22A*
22A*
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
SMD-0.5
PD - 93751B
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