參數(shù)資料
型號: IRHNA5760SE
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT
中文描述: 晶體管| MOSFET的| N溝道| 200伏五(巴西)直| 55A條(?。﹟貼片
文件頁數(shù): 7/8頁
文件大?。?/td> 119K
代理商: IRHNA5760SE
www.irf.com
7
Pre-Irradiation
IRHNB7064
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
Starting T , Junction Temperature( C)
E
A
ID
16A
22A
35A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRHNA57Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
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IRHNA597160 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT
IRHNA7Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
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