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參數(shù)資料
| 型號(hào)： | IRHM9150U |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 21A I(D) | TO-254VAR |
| 中文描述： | 晶體管| MOSFET的| P通道| 100V的五（巴西）直| 21A條（?。﹟對(duì)254VAR |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 140K |
| 代理商： | IRHM9150U |
IRHM9130, IRHM93130 Device
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-11
-44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
250
0.84
V
ns
μ
C
T
j
= 25°C, IS = -11A, VGS = 0V
Tj = 25°C, IF = -11A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.1
Max Units
—
—
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
0.3
0.325
-4.0
—
-25
-250
VGS = -12V, ID = -7.0A
VGS = -12V, ID = -11A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -7.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS =-20 V
VGS = 20V
VGS = -12V, ID = -11A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
45
10
25
30
50
70
70
—
nC
VDD = -50V, ID = -11A,
RG = 7.5
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
300
74
—
—
—
VGS = 0V, VDS = -25 V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
μ
A
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
1.67
—
30
°C/W
Typical socket mount
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