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參數(shù)資料
| 型號(hào)： | IRHM7C50SE |
| 元件分類： | JFETs |
| 英文描述： | 10.4 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | IRHM7C50SE |
IRHM2C50SE, IRHM7C50SE Devices
www.irf.com
7
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (B R)DS S
I AS
R G
IAS
0.01
tp
D.U.T
L
V DS
+
-
VDD
DR IV E R
A
15 V
20V
Pre-Irradiation
12V
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E
,
Single
Pulse
Avalanche
Energy
(mJ)
J
AS
°
ID
TOP
BOTTOM
4.7A
6.6A
10.4A
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