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參數(shù)資料
| 型號(hào)： | IRHM7460SESCS |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IRHM7460SESCS |
IRHM7460SE Device
www.irf.com
3
Table 1. Low Dose Rate
IRHM7460SE
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
500
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
IDSS
Zero Gate Voltage Drain Current
—
50
A
VDS=0.8 x Max Rating, VGS=0V
RDS(on)1
Static Drain-to-Source
—
0.32
VGS = 12V, ID = 11.7A
On-State Resistance One
VSD
Diode Forward Voltage
—1.8
V
TC = 25°C, IS = 18A,VGS = 0V
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
Min Typ Max
Units
Test Conditions
VDSS
Drain-to-Source Voltage
—
400
—
400
V
Applied drain-to-source voltage during
gamma-dot
IPP
—
7.0
—
7.0
—
A
Peak radiation induced photo-current
di/dt
—
16
—
2.3
—
A/sec Rate of rise of photo-current
L1
—
27
—
133
—
H
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate voltage of 12 volts per note
5 and a VDS bias condition equal to 80% of the de-
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 105 Rads (Si) aree pre-
sented in Table 1, column 1, IRHM7460SE. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 105 Rads (Si) the
only parameter limit change is VGSTh minimum.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec ( See Table 2 ).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
LET (Si)
Fluence
Range
VDSBias
VGS Bias
Ion
(MeV/mg/cm2)
(ions/cm2)
(m)
(V)
Cu
28
3x 105
~43
375
-5
Radiation Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM7C50SE | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| IRHM7Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM8054D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
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