- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224019 > IRHM7360SEU 22 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHM7360SEU |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 142K |
| 代理商： | IRHM7360SEU |
IRHM7360SE Device
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.51
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
0.20
VGS = 12V, ID = 14A
On-State Resistance
—
0.21
VGS = 12V, ID = 22A
VGS(th)
Gate Threshold Voltage
2.5
—
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
6.0
—
S ( )VDS > 15V, IDS = 14A
IDSS
Zero Gate Voltage Drain Current
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
185
VGS = 12V, ID = 22A
Qgs
Gate-to-Source Charge
—
35
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (‘Miller’) Charge
—
100
td(on)
Turn-On Delay Time
—
28
VDD = 200V, ID = 22A,
tr
Rise Time
—
97
RG = 2.35
td(off)
Turn-Off Delay Time
—
120
tf
Fall Time
—
72
LD
Internal Drain Inductance
—
8.7
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Input Capacitance
—
4000
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
1000
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
460
—
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
A
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
22
Modified MOSFET symbol showing the integral
ISM
Pulse Source Current (Body Diode)
——
88
reverse p-n junction rectifier.
VSD
Diode Forward Voltage
—
1.4
V
Tj = 25°C, IS = 22A, VGS = 0V
trr
Reverse Recovery Time
—
720
ns
Tj = 25°C, IF = 22A, di/dt ≤ 100A/s
QRR
Reverse Recovery Charge
—
14
CVDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.50
RthCS
Case-to-Sink
—
0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHM7460SESCS | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| IRHM7460SEU | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRKH230-20D32 | 510 A, 2000 V, SCR |
| IRKH41/04APBF | 70.65 A, 400 V, SCR, TO-240AA |
| IRKH41/04AS90PBF | 70.65 A, 400 V, SCR, TO-240AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM7360U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-254VAR |
| IRHM7450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM7450_06 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM7450D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254VAR |
| IRHM7450SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。