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參數(shù)資料
| 型號： | IRHM7250SEU |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRHM7250SEU |
IRHM7250SE Devices
2
www.irf.com
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
—
V
VGS = 0V, ID = 1.0mA
D
BVDSS/DTJ Temperature Coefficient of Breakdown
—
0.26
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
0.10
VGS = 12V, ID = 16A
On-State Resistance
—
0.105
W
VGS = 12V, ID = 26A
VGS(th)
Gate Threshold Voltage
2.5
—
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
7.5
—
S ( )VDS > 15V, IDS = 16A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
180
VGS = 12V, ID = 26A
Qgs
Gate-to-Source Charge
—
35
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (‘Miller’) Charge
—
83
td(on)
Turn-On Delay Time
—
33
VDD = 100V, ID = 26A,
tr
Rise Time
—
140
RG = 2.35W
td(off)
Turn-Off Delay Time
—
140
tf
Fall Time
—
140
LD
Internal Drain Inductance
—
8.7
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Input Capacitance
—
3100
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
990
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
380
—
nA
W
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
m
A
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
26
Modified MOSFET symbol showing the integral
ISM
Pulse Source Current (Body Diode)
—
104
reverse p-n junction rectifier.
VSD
Diode Forward Voltage
—
1.9
V
Tj = 25°C, IS = 26A, VGS = 0V
trr
Reverse Recovery Time
—
550
ns
Tj = 25°C, IF = 26A, di/dt 100A/ms
QRR
Reverse Recovery Charge
—
8.8
m
CVDD 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.83
RthCS
Case-to-Sink
—
0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM7250U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR |
| IRHM7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM7260D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7260U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VAR |
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