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參數(shù)資料
| 型號： | IRHM57264SE |
| 英文描述： | 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package |
| 中文描述： | 250V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 254AA封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRHM57264SE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35*
35*
140
250
2.0
±20
500
35
25
4.8
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6 mm from case for10s )
9.3 (Typical )
g
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
9/05/01
www.irf.com
1
60V, N-CHANNEL
TECHNOLOGY
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHM57064 100K Rads (Si) 0.012
IRHM53064 300K Rads (Si) 0.012
IRHM54064 600K Rads (Si) 0.012
IRHM58064 1000K Rads (Si) 0.013
I
D
35A*
35A*
35A*
35A*
Features:
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
TO-254AA
Pre-Irradiation
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM57064
PD - 93792B
相關PDF資料 |
PDF描述 |
|---|---|
| IRHM57Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA |
| IRHM58064 | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| IRHM58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AA |
| IRHM7054D | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7054U | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM57264SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57264SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHM57Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM57Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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