參數(shù)資料
型號(hào): IRHM4Z60PBF
元件分類: JFETs
英文描述: 35 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝: HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
文件頁數(shù): 6/8頁
文件大小: 122K
代理商: IRHM4Z60PBF
6
www.irf.com
IRHM7Z60
Pre-Irradiation
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
GS
25
50
T , Case Temperature (°
75
100
125
150
0
20
40
60
80
100
120
I
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
T
t
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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