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參數(shù)資料
| 型號(hào)： | IRHM2C50SEUPBF |
| 元件分類： | JFETs |
| 英文描述： | 10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | IRHM2C50SEUPBF |
Absolute Maximum Ratings
Parameter
IRHM2C50SE, IRHM7C50SE Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
10.4
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
6.5
IDM
Pulsed Drain Current
41.6
PD @ TC = 25°C
Max. Power Dissipation
151
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
10.4
A
EAR
Repetitive Avalanche Energy
15.1
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
PD - 91252A
Pre-Irradiation
600Volt, 0.6
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
oC
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM2C50SE
HEXFET TRANSISTOR
1/6/99
www.irf.com
1
IRHM7C50SE
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM2C50SE
600V
0.60
10.4A
IRHM7C50SE
600V
0.60
10.4A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHM2C50SEDPBF | 10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRHM2C50SE | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| IRHM7C50SE | 10.4 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| IRHM7250SEUPBF | 26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRHM7250SEU | 26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM3054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM3150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM3160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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