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參數(shù)資料
| 型號(hào)： | IRHM2C50SEDPBF |
| 元件分類： | JFETs |
| 英文描述： | 10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | IRHM2C50SEDPBF |
IRHM2C50SE, IRHM7C50SE Devices
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
1000
2000
3000
4000
5000
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Crss
Coss
Ciss
0
30
60
90
120
150
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
10.4A
V
= 120V
DS
V
= 300V
DS
V
= 480V
DS
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
V
,Source-to-Drain Voltage (V)
I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
10us
100us
1ms
10ms
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