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參數(shù)資料
| 型號(hào)： | IRHM2C50SE |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 98K |
| 代理商： | IRHM2C50SE |
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
600
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.6
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
0.60
VGS = 12V, ID = 6.5A
On-State Resistance
—
0.65
VGS = 12V, ID = 10.4A
VGS(th)
Gate Threshold Voltage
2.5
—
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
3.0
—
S ( )VDS > 15V, IDS = 6.5A
IDSS
Zero Gate Voltage Drain Current
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
150
VGS = 12V, ID = 10.4A
Qgs
Gate-to-Source Charge
—
30
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (‘Miller’) Charge
—
75
td(on)
Turn-On Delay Time
—
28
VDD = 300V, ID = 10.4A,
tr
Rise Time
—
75
RG = 2.35
td(off)
Turn-Off Delay Time
—
75
tf
Fall Time
—
75
LD
Internal Drain Inductance
—
8.7
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Input Capacitance
—
2510
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
400
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
110
—
nA
nH
ns
Measured from drainlead,
6mm (0.25 in) from package
tocenterofdie.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ingtheinternal inductances.
A
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
10.4
Modified MOSFET symbol showingtheintegra
l
ISM
Pulse Source Current (Body Diode)
—
41.6
r
eversep-njunctionrectifier.
VSD
Diode Forward Voltage
—
1.6
V
Tj = 25°C, IS = 10.4A, VGS = 0V
trr
Reverse Recovery Time
—
750
ns
Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/s
QRR
Reverse Recovery Charge
—
9.8
CVDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.83
RthCS
Case-to-Sink
—
0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
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