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參數資料
| 型號： | IRHLF740Z4 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| 中文描述： | 抗輻射邏輯電平功率MOSFET通孔（到39） |
| 文件頁數： | 3/8頁 |
| 文件大小： | 150K |
| 代理商： | IRHLF740Z4 |
www.irf.com
3
Radiation Characteristics
IRHLF770Z4
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 250
μ
A
V
GS(th)
Gate Threshold Voltage
1.0 2.0 1.0 2.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 1.0 — 10 μA V
DS
= 48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.5 — 0.5
V
GS
= 4.5V, I
D
= 1.0A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.2 —
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V
V
GS
= -10 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHLF770Z4, IRHLF730Z4 and IRHLF740Z4
2. Part number IRHLF780Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Fig a.
Single Event Effect, Safe Operating Area
1.2 V V
GS
= 0V, IS = 1.6A
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(μm)
@VGS=
0V
@VGS=
-2V
@VGS= @VGS= @VGS= @VGS= @VGS=
-4V
-5V
-6V
@VGS=
-10V
-7V
-8V
Br
I
Au
37.3
59.9
82.3
285
345
357
36.8
32.7
357
60
60
60
60
60
60
60
60
60
60
60
60
60
60
-
35
20
-
30
15
-
20
-
-
0
10
20
30
40
50
60
70
-12
-10
-8
-6
-4
-2
0
VGS
V
Br
I
Au
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| IRHLF770Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
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相關代理商/技術參數 |
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|---|---|
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| IRHLF770Z4SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHLF770Z4SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHLF77110 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
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