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參數(shù)資料
| 型號(hào)： | IRHF7330SE |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
| 中文描述： | N通道單粒子效應(yīng)（見(jiàn)）拉德硬的HEXFET晶體管（不適用溝道單事件效應(yīng)拉德硬盤(pán)的HEXFET技術(shù)晶體管） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | IRHF7330SE |
IRHF7330SE Devices
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
0.1
1
10
100
0.0
0.4
0.8
1.2
1.6
2.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
8
Q , Total Gate Charge (nC)
16
24
32
40
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
3A
V
= 80V
DS
V
= 200V
DS
V
= 320V
DS
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
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| IRHF7430SE | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF7330SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7330SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF7430SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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