參數(shù)資料
型號(hào): IRHF58Z30
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 12A條(?。﹟ TO - 39封裝
文件頁(yè)數(shù): 7/8頁(yè)
文件大小: 129K
代理商: IRHF58Z30
www.irf.com
7
Pre-Irradiation
IRHF57Z30
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
250
500
750
1000
1250
1500
Starting T , Junction Temperature ( C)
E
A
ID
5.4A
9.6A
12A
TOP
BOTTOM
.
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