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參數(shù)資料
| 型號(hào)： | IRHF58034 |
| 廠商： | International Rectifier |
| 英文描述： | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60V的N通道通孔抗輻射功率MOSFET（60V的通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 130K |
| 代理商： | IRHF58034 |
www.irf.com
3
Radiation Characteristics
IRHF57034
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.034 — 0.043
V
GS
= 12V, I
D
=10A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.048 — 0.060
V
GS
= 12V, I
D
=10A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57034, IRHF53034 and IRHF54034
2. Part number IRHF58034
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 12A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
Kr
Xe
Au
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Kr
39.2
300 37.4 60 60 60 52 34
Xe
63.3
300 29.2 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20 14
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRHF58034CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| IRHF58130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58Z30CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
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