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參數(shù)資料
| 型號(hào)： | IRHF57Z30 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 12A條（丁）| TO - 39封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRHF57Z30 |
www.irf.com
5
Pre-Irradiation
IRHF57Z30
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
12A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100μs
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