參數(shù)資料
型號: IRHF54230
廠商: International Rectifier
英文描述: 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管)
中文描述: 為200V,N溝道通孔抗輻射功率MOSFET(200V的電壓,通孔安裝抗輻射功率?溝道馬鞍山場效應(yīng)管)
文件頁數(shù): 7/8頁
文件大小: 129K
代理商: IRHF54230
www.irf.com
7
Pre-Irradiation
IRHF57230
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
50
100
150
200
250
Starting T , Junction Temperature( C)
E
A
ID
3.3A
4.6A
7.3A
TOP
BOTTOM
.
相關(guān)PDF資料
PDF描述
IRHF53230 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管)
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