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參數(shù)資料
| 型號(hào)： | IRH93250 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 204AE包 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | IRH93250 |
IRH9230
100K Rads (Si)
min.
-200
-2.0
—
—
—
—
Parameter
Units
Test Conditions
max.
—
-4.0
-100
100
-25
0.8
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -4.1A
μA
V
SD
—
-5.0
V
T
C
= 25°C, I
S
= -6.5A,V
GS
= 0V
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
VDSS bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identical
and are presented in Table 1. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used.
Radiation Performance of P-Channel Rad Hard
HEXFETs
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects environment and the results are shown in
Table 3.
IRH9230 Device
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec
—
—
-160
—
10
12
Rads (Si)/sec
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1
-12
-160
—
—
—
—
—
—
20
-12
-8
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
) (ions / cm
2
)
28
Fluence
Range
(
μ
m)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
5
Parameter
BVDSS
Typ.
-200
Units
V
Ion
Ni
1 x 10
5
V
nA
Table 1. Low Dose Rate
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