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參數(shù)資料
| 型號： | IRH93230 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 204AA封裝 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | IRH93230 |
IRH9230 Device
Radiation Characteristics
Repetitive Rating
; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = -6.5A, VGS = -12V, 25
≤
RG
≤
200
2
) * [BVDSS/(BVDSS-VDD)]
ISD
≤
-6.5A, di/dt
≤
-140 A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions
Conforms to JEDEC Outline TO-204AA (Modified TO-3)
Dimensions in Millimeters and (Inches)
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732 020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 49 61 729 6590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: 39 11451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: 81 33 983 0641
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
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