- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360957 > IRH7250SE 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package PDF資料下載
參數(shù)資料
| 型號： | IRH7250SE |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package |
| 中文描述： | 200伏100kRad高可靠性單N溝道MOSFET的看硬化在TO - 204AE包 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IRH7250SE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
26
16
104
150
1.2
±20
500
26
15
5.9
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10 sec.)
11.5 (Typical)
g
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-204AA/AE)
5/17/01
www.irf.com
1
TO-204AE
Product Summary
Part Number Radiation Level R
DS(on)
IRH7250SE 100K Rads (Si)
I
D
0.10
26A
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
For footnotes refer to the last page
IRH7250SE
200V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
International Rectifier’s RADHard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
PD - 91778A
Pre-Irradiation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRH7450 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-204AA |
| IRH8130 | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH8450 | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH93230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH93250 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRH7450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH7450SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH7450SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRH8054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH8130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。