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參數(shù)資料
| 型號(hào)： | IRH3054 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 240K |
| 代理商： | IRH3054 |
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3
Pre-Irradiation
IRH7054
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)
300 - 1000K Rads (Si)
U
UU
UUnits
nits
Test Conditions
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
60
60
V
VGS = 0V, ID = 1.0mA
V/5JD
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
25
50
A
VDS=48V, VGS =0V
RDS(on)
Static Drain-to-Source"
0.027
0.027
VGS = 12V, ID =45A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source"
0.027
0.027
VGS = 12V, ID =45A
On-State Resistance (TO-204AE)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage"
1.4
1.4
V
VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
Energy
Range
Energy
Range
Energy
Range
Energy
Range
V
VV
V
VDS(V)
DS(V)
MeV/(mg/cm )) (MeV)
(m)
@
V
VV
VVGS
GS
=0V @
V
VV
V
VGS
GS
=-5V@
V
VV
V
VGS
GS
=-10V @
V
VV
VVGS
GS
=-15V @
V
VV
VVGS
GS
=-20V
I
59.9
345
32.8
60
45
40
30
Br
36.8
305
39
40
35
30
25
20
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
VDS
BR
I
1. Part numbers IRH7054,
2. Part number IRH3054, IRH4540 and IRH8054
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| IRH4054 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
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